Refine your search:     
Report No.
 - 
Search Results: Records 1-1 displayed on this page of 1
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Effects of Al composition on luminescence properties of europium implanted Al$$_{x}$$Ga$$_{1-x}$$N(0$$<$$x$$<$$1)

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Shibata, Tomohiko*; Tanaka, Mitsuhiro*

Physica Status Solidi, 0(7), p.2623 - 2626, 2003/07

In our previous study, it was reported that Eu-doped Nitride semiconductors show luminescence propetires. In this study, we investigate the relationship between luminescence properties and Al composition using Al$$_{x}$$Ga$$_{1-x}$$N(0$$<$$x$$<$$1). Al$$_{x}$$Ga$$_{1-x}$$N were grown using OMVPE. Eu atoms were doped into the samples by ion implantation (200keV). After implantation, the samples were annealed to remove residual damege. Luminescence propreties of the samples were measured using photoluminescence and cathodeluminescence. As a result, luminescence at 621 nm which relates 4f-4f transition were observed for all samples (x=0 to 1). As for intensity, samples with x=0.5 show the strongest luminescence. This result can be interpreted in terms of the internal stress of crystals by the existence of Al atoms.

1 (Records 1-1 displayed on this page)
  • 1